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Electronic band structure and free carrier properties of strained Tin-Germanium alloys on InSb from FTIR ellipsometry


Journal article


R. Carrasco, S. Zollner, A. Kiefer, B. Claflin, S. Chastang, J. Duan, G. Grzybowski
Bulletin of the American Physical Society, vol. 65, 2020

Cite

Cite

APA   Click to copy
Carrasco, R., Zollner, S., Kiefer, A., Claflin, B., Chastang, S., Duan, J., & Grzybowski, G. (2020). Electronic band structure and free carrier properties of strained Tin-Germanium alloys on InSb from FTIR ellipsometry. Bulletin of the American Physical Society, 65.


Chicago/Turabian   Click to copy
Carrasco, R., S. Zollner, A. Kiefer, B. Claflin, S. Chastang, J. Duan, and G. Grzybowski. “Electronic Band Structure and Free Carrier Properties of Strained Tin-Germanium Alloys on InSb from FTIR Ellipsometry.” Bulletin of the American Physical Society 65 (2020).


MLA   Click to copy
Carrasco, R., et al. “Electronic Band Structure and Free Carrier Properties of Strained Tin-Germanium Alloys on InSb from FTIR Ellipsometry.” Bulletin of the American Physical Society, vol. 65, 2020.


BibTeX   Click to copy

@article{carrasco2020a,
  title = {Electronic band structure and free carrier properties of strained Tin-Germanium alloys on InSb from FTIR ellipsometry},
  year = {2020},
  journal = {Bulletin of the American Physical Society},
  volume = {65},
  author = {Carrasco, R. and Zollner, S. and Kiefer, A. and Claflin, B. and Chastang, S. and Duan, J. and Grzybowski, G.}
}